摘要
Undoped and Si-doped AlGaN/AlN multiple quantum wells （MQWs） were grown on A1N/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room-temperature （RT） cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.
Undoped and Si-doped AlGaN/AlN multiple quantum wells （MQWs） were grown on A1N/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room-temperature （RT） cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.
基金
Project supported by the National Natural Science Foundation of China(Grant No.60976011)
the Knowledge Innovation Program of CIOMP(Grant No.08CY32M080)
the Akasaki Research Center at Nagoya University,Japan,the Grants-in-Aid for Scientific Research of the Ministry of Education,Culture,Sports,Science and Technology of Japan(Grant Nos.18360008 and 18560010)
the Scientific Research on Priority Areas of the Ministry of Education,Culture,Sports,Science and Technology of Japan (Grant No.18069006)
