Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

导出

摘要 The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal （PC） lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal （PC） lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED.

作者文锋刘德明黄黎蓉

机构地区 Wuhan National Laboratory for Optoelectronics

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第10期43-46,共4页 半导体学报（英文版）

基金 Project supported by the National Natural Science Foundation of China(No.60777019)

关键词 photonic crystal light emitting diode finite-difference time-domain modeling photonic crystal light emitting diode finite-difference time-domain modeling

分类号 TN312.8 [电子电信—物理电子学]

引文网络
相关文献

参考文献11

1Steigerwald D A, Bhat J C, Collins D, et al. Illumination with solid state lighting technology. IEEE J Sel Topics Quantum Electron, 2002, 8(2): 310.
2Kim S H, Lee K D, Kim J Y, et al. Fabrication ofphotonic crystal structures on light emitting diodes by nanoimprint lithography. Nanotechnology, 2007, 18(5): 1.
3Erchak A A, Ripin D J, Fan S, et al. Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode. Appl Phys Lett, 2001, 78(5): 563.
4Kim D H, Cho C O, Roh Y G, et al. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns. Appl Phys Lett, 2005, 87(20): 203508.
5Oder T N, Kim K H, Lin J Y, et al. Ⅲ-nitride blue and ultraviolet photonic crystal light emitting diodes. Appl Phys Lett, 2004, 84(4): 466.
6Wierer J J, Krames M R, Epler J E, et al. InGaN/GaN quantumwell heterostructure light-emitting diodes employing photonic crystal structures. Appl Phys Lett, 2004, 84(19): 3885.
7David A, Moran B, McGroddy K, et al. GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth. Appl Phys Lett, 2008, 92(11): 113514.
8Matioli E, Iza M, Choi Y S. GaN-based embedded 2D photonic crystal LEDs: numerical optimization and device characterization. Phys Status Solidi C, 2009, 11(1): 13.
9Chao C H, Chuang S L, Wu T L. Theoretical demonstration of enhancement of light extraction of flip-chip GaN light-emitting diodes with photonic crystals. Appl Phys Lett, 2006, 89(9): 091116.
10Ryu H Y, Hwang J K, Lee Y J, et al. Enhancement of light extraction from two-dimensional photonic crystal slab structures. IEEE J Sel Topics Quantum Electron, 2002, 8(2): 231.

1姬小利,杨富华,王军喜,段瑞飞,丁凯,曾一平,王国宏,李晋闽.Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes[J].Journal of Semiconductors,2010,31(9):49-52.
2慢光(编译).非极性氮化镓发光二极管功率再创新高[J].激光与光电子学进展,2007,44(6):13-14.
3季莲,江德生,张书明,刘宗顺,曾畅,赵德刚,朱建军,王辉,段俐宏,杨辉.Time delay in InGaN multiple quantum well laser diodes at room temperature[J].Chinese Physics B,2010,19(12):305-309.
4Robert A.Burckle.工业嵌入式PC的选择[J].电子产品世界,2005,12(03B):98-99.
5黎大兵,胡卫国,三宅秀人,平松和政,宋航.Enhanced deep ultraviolet emission from Si-doped Al_xGa_(1-x)N/AlN MQWs[J].Chinese Physics B,2010,19(12):510-514.
6张笑秋,章瑞平.利用时域建模法对大型机械运行状态在线监测[J].机械工业自动化,1997(2):41-42.
7Jinzong Li Xiangquan Wei Dongdong Li.The Formula and Analyses of Operating Range of Light Emitting Diode[J].通讯和计算机（中英文版）,2005,2(11):77-81.
8巴可发布新款3D模拟仿真三片DLP投影机[J].轨道交通,2009(12):21-21.
9刘泉,张金如.无记忆弱非线性系统的时域建模方法─Volterra级数的应用[J].武汉工业大学学报,1996,18(2):68-72.
10郝惠莲,刘宏波.基于“半导体制造技术”探讨氮化镓发光二极管倒装芯片结构及制造工艺[J].求知导刊,2016(20):42-42.

Journal of Semiconductors

2010年第10期

浏览历史

内容加载中请稍等...

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

参考文献11

相关作者

相关机构

相关主题

浏览历史