摘要
用射频磁控反应溅射方法，在高纯Ｎ２、Ａｒ（纯度均为９９．９９９％）的气氛中，以高纯Ａｌ为靶材，成功地制备了ＡｌＮ薄膜．研究了不同气体组分、不同衬底温度对薄膜结晶性的影响．发现退火能使薄膜的结晶性得到改善。
Aluminum nitride thin film was successfully prepared by radio frequency magnetron sputtering with target of high pure Al in atomosphere of high pure N 2, Ar mixture (purity is 99.999%). Effect of different gas ratio and substrate temperature on crystallinity of the thin films was studied. Annealing can improve the crystallinity. Blue violet cathodoluminescence was found at room temperature in the AlN thin film annealed at 960℃ for 1hr.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1999年第2期165-169,共5页
Chinese Journal of Luminescence
基金
国家自然科学基金
