摘要
利用直流磁控反应溅射钢锡合金靶和锌铝合金靶，在软基片上低温沉积了Ｉｎ２Ｏ３：Ｓｎ（ＩＴＯ）和ＺｎＯ：Ａｌ（ＺＡＯ）透明导电薄膜．结果表明，ＩＴＯ和ＺＡＯ薄膜均出现晶格畸变：柔性基片上低温沉积薄膜的电阻率对氧分压的依赖性远低于硅和玻璃衬底；尺度效应对薄膜电阻率有重要的影响实验测得ＩＴＯ薄膜在６０ｎｍ厚时获得最低电阻率为４．２３×１０－４·ｃｍ，ＺＡＯ薄膜在２０ｎｍ厚时获得最低电阻率为８．０９×１０－４·ｃｍ．无论ＩＴＯ或是ＺＡＯ，其可见光区的平均透射率均大于７５％基于薄膜吸收系数的研究表明，ＩＴＯ薄膜的光学直接能隙在３．６５－４．００ｅＶ之间，间接跃迁在２．５０—２７５ｅＶ之间ＺＺＡＯ薄膜的光学直接能隙在３．２０—３；６０ｅＶ之间，间接跃迁在２５０—２．
In2O3: Sn (ITO) and ZnO: Al (ZAO) films have been prepared on flealble substratesat low temperature by DC magnetron reactive sputtering from alloy targets In/Sn(mass ratio is 9:1)and Zn/AI (mass ratio is 9.88: 0.12) in mixture atmosphere of argon and oxygen. The results indicatedthat both ITO and ZAO films show lattice distortion; the dependencies of resistivity for both ITO andZAO hims deposited on flexible substrate on oxygen partial pressure are far less than those on silicon andglass substrates; scale-effect has a considerable influence on film resistivity. The minimum resistivity is4.23x10-4. cm for ITO films at a thickness of about 60 urn; while for ZAO, the value is 8.09×0-4.cm at a thickness of 20 urn. The average transmittances in visible region are above 75% for both ITO andZAO. fukns,Based on the absorption coefficients, the direct optical gap was evaluated to be 3.65 - 4.00eV and the indirect shift to be 2.50 - 2.75 eV for ITO films; while for ZAO films, the value to be 3.20- 3.60 eV and 2.50 - 2.75 eV.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第4期443-448,共6页
Acta Metallurgica Sinica
基金
沈阳市科技攻关项目
关键词
柔性基片
光学能隙
半导体薄膜
制备
ITO
ZAO
lattice distortion, oxygen partial pressure, scale effect, transmittance and optical gap
