摘要
利用分波法计算了薄膜电致发光器件中硫空位对电子的散射速率，并将其与其它散射机制进行了比较。研究了散射速率与电子能量及温度的关系，并比较了硫空位俘获电子前后的散射速率。提出硫空位的存在是阻碍获得高亮度蓝色薄膜电致发光器件的关键。
The scatter rate of sulphur vacancy in thin film electroluminescent device is calculated through phase shift analysis.The results are compared with other scatter mechanisms.The dependence of scatter rate on electron energy and temperature is studied.The change of scatter rate after the sulphur captured an electron is also investigated.We proposed that,because of the high scatter rate,sulphur vacancy is the main obstacle on the achieve of high brightness blue thin film electroluminescence.
出处
《光电子．激光》
EI
CAS
CSCD
1999年第2期99-101,共3页
Journal of Optoelectronics·Laser
基金
"八六三"计划715主题
国家自然科学基金
