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沉积时间对电沉积ZnS薄膜的影响 被引量:3

Effect of Deposition Time on ZnS Thin Films Prepared by Electrodeposition Method
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摘要 采用阴极恒电位法在氧化锡铟导电玻璃(ITO)基板上电沉积了ZnS薄膜,用X射线衍射仪(XRD)、原子力显微镜(AFM)和紫外/可见/近红外吸收光谱仪(UV-VIS-NIR)对薄膜的物相结构,微观形貌和光学性能进行了表征,研究了沉积时间对薄膜的结构以及光学性能的影响。研究结果表明:当沉积时间为6min时,可以得到表面均匀而致密的ZnS薄膜,在500~1000nm波长范围内的薄膜透过率约为40%~60%。随着沉积时间的增加,ZnS薄膜的结晶程度、微观形貌均有所改善,但当沉积时间达到或超过8min时,薄膜的结构和性能又有所下降。 Zinc sulfide (ZnS) thin films were deposited on indium tin oxide (ITO) glass by the cathodic electrodeposition method. The phase compositions, morphologies and optical properties of the asdeposited thin films were characterized by X-ray diffraction ( XRD), atomic force microscope (AFM) and uhraviolet-visible-infrared spectrophotometer (UV-VIS-NIR). The effect of deposition time on the structure and optical properties of ZnS thin films was investigated. The results show that when the deposition time is 6 min, a dense and homogenous surface morphology ZnS thin films can be obtained and the transmittance of the thin films is about 50%-60% in the range of 500-1000 nm. As the deposition time increasing, the crystallinity and morphologies of the ZnS thin films are improved, but when the deposition time is up to 8 min or above, it will give disadvantages to the thin films.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2010年第B06期69-72,共4页 Journal of Synthetic Crystals
基金 陕西科技大学研究生创新基金资助项目
关键词 ZNS薄膜 电沉积 X射线衍射 沉积时间 ZnS thin films electrodeposition X-ray diffraction deposition time
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  • 1王宝义,张仁刚,万冬云,王雨田,魏龙.ZnS基电致发光薄膜及其制备方法[J].材料导报,2003,17(11):33-35. 被引量:7
  • 2Bacaksiz E, GorUr O, Tomakin M, et al. Ag Diffusion in ZnS Thin films Prepared by Spray Pryolysis [J]. Materials Letters,2007,61:5239-5242.
  • 3王晓峰,张希清,徐征,衣立新,侯延冰,何大伟,王永生,董金风,徐叙.ZnS:Li_2O 薄膜的电致发光特性[J].光电子.激光,2001,12(4):334-336. 被引量:2
  • 4Nakada T, Mizutani M. High-efficiency Cu (In, Ga) Se2 Thin Film Solar Ceils with a CBD-ZnS Buffer Layer Solar Energy[ J]. Materials and Solar Cells ,2001,67:255-260.
  • 5Oladeji S O, Chow L. Synthesis and Processing of CdS/ZnS Muhilayer Films for Solar Cell Application [ J ]. Thin Solid Films ,2005,474:77-83.
  • 6Goudarzi A, Aval G M, Sahraei R, et al. Ammonia-free Chemical Bath Deposition of Nanocrystalline ZnS Thin Buffer Layer for Solar Cells[J]. Thin Solid Films ,2008,516:4953-4957.
  • 7Long F, Wang W M, Cui Z K, et al. An Improved Method for Chemical Bath Deposition of ZnS Thin Films[J]. Chemical Physics Letters,2008, 462:84-87.
  • 8Yano S, Schroeder R, Ullrich B, et al. Absorption and Photocurrent Properties of Thin ZnS Films Formed by Pulsed-laser Deposition on Quartz [ J ]. Thin Solid Films ,2003,423:273-276.
  • 9周咏东,方家熊,李言谨,龚海梅,汤定元.ZnS薄膜的溅射沉积及其XPS研究[J].无机材料学报,2000,15(6):1127-1130. 被引量:10
  • 10黄剑锋,朱辉,曹丽云,吴建鹏,贺海燕.pH值对电沉积法制备ZnS光学薄膜影响的研究[J].人工晶体学报,2008,37(4):862-865. 被引量:6

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