摘要
为了避免使用切削液及其相应清洗工艺对KDP晶体表面产生雾化、引入杂质等降低晶体抗激光损伤阈值的不利因素,采用干切削技术对KDP晶体进行超精密切削。在干切削KDP晶体工艺中所遇到的难点是切削屑片易粘附已加工表面,由此产生屑片粘附点难清洗、易雾化等问题。本文提出了基于真空抽屑装置干切削KDP晶体的新工艺,重点解决了干切削工艺下KDP晶体表面粘屑现象,实现了无需清洗、无杂质的加工表面。在选择延性域切削参数条件下,取得了表面粗糙度为2.69 nm(Ra)的无粘屑、超光滑表面。
In order to avoid surface impurities generated by using of machining oil and cleaning process cause ＇Fogging＇ of the KDP crystals,which would decrease the laser induced damage threshold,dry cutting of KDP is currently a kind of key machining technology.However,the main difficulty identified in dry cutting of KDP is that removal chips from the machined surface because the surface point adhered by cutting chips is easy to ＇Fogging＇ and difficult to clean.This paper presented a technology which is dry cutting of KDP crystals using of vacuum suction technique for extraction of chips,and a smooth surface with free impurity was realized by extraction of chips.In the condition of selecting cutting parameters,a super-smooth surface with chip free is achieved,and the roughness of surface is measured as 2.69 nm（Ra）.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第5期1104-1108,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金重点项目(No.50535020)
关键词
KDP晶体
延性域
真空抽屑
干切削
KDP crystals
ductile mode
vacuum suction
dry cutting
