摘要
提出了一种新型非对称宽耦合波导结构,通过理论计算优化了结构中n型波导层和限制层厚度,并采用低压金属有机化学气相沉积方法生长了设计的器件结构。测试了器件的光电特性,1200μm腔长器件的阈值电流为590mA,斜率效率为0.96W/A,最大输出功率达2000mW;当注入电流为0.6A时,其远场发散角为16.1°(θ⊥)×10.2°(θ∥)。实验结果表明:新型非对称宽耦合波导结构能实现器件大功率输出,有效减小器件远场垂直发散角,改善器件光束质量。
A new-style asymmetric wide-coupled waveguide structure was put forward.The thickness of both N-type waveguide layer and cladding layer was optimized through theoretical calculation of this structure,and the designed semiconductor lasers were grown by low-pressure metal-organic chemical vapor deposition（MOCVD）.The fabricated 980nm laser diode with 1 200 mm cavity length has a threshold current of 590mA,slope efficiency of 1.0.96W/A and maximum output power of 2 000mW.When the injection current is 0.6A,the far field divergence angle is 16.1°（vertical）by 10.2°（horizontal）.Experimental results indicate that the new-style asymmetric wide-coupled waveguide structure can achieve high power output,effectively reduce the vertical far field divergence angle and improve the beam quality of the device.
出处
《半导体光电》
CAS
CSCD
北大核心
2010年第5期677-681,686,共6页
Semiconductor Optoelectronics
