摘要
从1988年法国科研人员首次发现高磁阻效应(GMR:Giant MagnetoResistance)以来,由于这些材料的高灵敏度、良好的温度稳定性和在较大测量范围内优异的线性,已在磁场测量及其它领域中获得了广泛应用。本文主要介绍高磁阻材料几种结构及其在磁场传感器中的应用。同时还将这种材料与传统磁场测量技术做了比较。将传感器和信号调理及输出电路集成在一起的集成高磁阻传感器,使高磁阻技术得到了进一步应用,本文也做相应介绍。
In this article GMR materials are described, as are their application in magnetic field sensors. New GMR structures utilizing spin valves and spin dependent tunneling(SDT) will offer even more potential for expanding the horizon of solid state magnetic sensing. Comparisons are made to sensors using conventional technology . Integrated GMR sensors that have signal conditioning and output electronics monolithically integrated with the sensor offer further uses of this new technology. Beyond the sensor itself, other control system functions have the potential for using the same GMR materials to make magnetic isolators and nonvolatile memories.
出处
《传感器世界》
1999年第6期6-12,共7页
Sensor World
关键词
传感器
高磁阻材料
磁场
应用
Magnetic,Sensor,Giant Magneto-Resistance,Material,
