摘要
介绍了一种新的亚微米发射极窗口刻蚀工艺。利用ＲＩＥ技术和边墙隔离技术，无须对位光刻，使发射极窗口精确地位于发射区中央。该工艺简单，具有良好的可操作性和重复性。
This paper introduces a novel submicron etching technology for emitter window.The RIE and sidewall insulation are adopted while alignment is not needed.The technology makes the contact window position in the center of emitter precisely.The process is simple,operative and repetitive.
出处
《半导体情报》
1999年第3期53-55,共3页
Semiconductor Information
