摘要
建立了异质结双极晶体管ＥＢ结空间电荷区复合电流的解析模型，基于该模型计算出了不同基区掺杂浓度下空间电荷区的复合率，获得了空间电荷区复合电流随外加电压的变化关系。
The analytical modelling of the recombination current in the baseemitter
space charge region of heterojunction bipolar transistors has been derived.The recombination
rates in baseemitter space charge region have been calculated for different base doping
concentrations.The relationships of the recombination current with applied voltage have been
determined.
出处
《半导体情报》
1999年第3期35-39,共5页
Semiconductor Information
基金
国防基金
