摘要
本文通过对双向负阻器件进行数值模拟，分析了其产生负阻的内部图象，模拟结果表明，高阻集电区厚度的减小或衬底杂质浓度的增加使负阻曲线的摆幅增大，而基区掺杂浓度的提高将使负阻曲线的峰值减小。
Through numerical simulation of bidirectional negative resistance device(BNRD),the internal picture of BNRD to produce negative resistance has been analyzed.The results show that:1.The amplitude of the negative resistance curve becomes large as the thickness of the high resistance collector region decreases or the dopant concentration of substrate increases.2.The peak of the negative resistance curve decreases as the dopant concentration of base region increases.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第2期66-69,共4页
Acta Electronica Sinica
基金
国家自然科学基金
关键词
负阻器件
数值模拟
半导体器件
Negative resistance device,Numerical simulation
