摘要
采用Sol-Gel法,以不同铝离子浓度的溶胶梯度掺杂的方法制备了Al掺杂ZnO（AZO）薄膜,用XRD衍射仪和SEM扫描电镜对该薄膜进行了结构和形貌分析,并对其电学性能和光学性能进行了研究。结果表明,梯度掺杂的AZO薄膜比单一浓度掺杂5.0 at%（原子数百分比）的薄膜具有更明显的c轴择优取向,更强的本征紫外发光峰和近紫外发光峰。当薄膜的退火温度在500~650℃区间时,薄膜电阻率稳定在10-2Ω.cm,高于700℃时,薄膜电阻率明显升高。
Al doped ZnO（AZO） thin films were prepared with different Al doped concentration gradient by Sol-Gel methods.The structure and morphology of AZO thin films were analyzed by using XRD and SEM and its electrical and optical properties were studied too.The results show that the gradient doped AZO thin films own higher c-axis preferred orientation significantly.Gradient doped AZO thin films have a stronger intrinsic UV and near UV spectrum.When the annealing temperature was between 500 ℃ and 650 ℃,the resistivity of the AZO thin films kept in 10-2 Ω·cm,when the annealing temperature was higher than 700 ℃,the resistivity of AZO thin films increased significantly.
出处
《西南科技大学学报》
CAS
2010年第3期1-5,共5页
Journal of Southwest University of Science and Technology
基金
教育部新世纪人才计划(NCET-06-0658)
