摘要
本文利用溶胶-凝胶法在玻璃基底上制备得到了AZO透明导电薄膜,就两种不同的热处理-退火方式对薄膜的结构与性质的影响做了比较,研究了掺杂浓度、退火温度对薄膜结构及性质的影响规律.结果表明,高温、分层退火、铝掺杂均有利于生成结晶度高、具有C轴优先取向的AZO薄膜;高温和分层退火有利于晶粒长大,相反铝掺杂却有碍晶粒长大;薄膜的电学性质随退火温度和铝掺杂量的变化呈现规律的变化.通过分析AZO薄膜内的晶体生长过程,本文认为主要是制备条件和AZO晶体的晶面习性导致了薄膜的结晶度、晶体生长取向性和晶粒尺寸等方面的差异.
Transparent conducting aluminum-doped zinc oxide （AZO） thin films have been prepared by the sol-gel method on glass substrate. In this paper,the effect of two different ways of heat-treatment and anneal on structure and properties of thin films was compared and the influence of doping concentration and annealed temperature on structure and properties of AZO films was studied. It was found that high temperature,layer by layer annealing and doping of aluminum are all propitious to the AZO films with high crystalline and preferential c-axis orientation;and on the other hand high temperature and layer by layer annealing are demonstrated to be beneficial to the crystallite size enhancement,whereas which is hold back by doping of aluminum;in addition,the regular change of the electricity properties of thin films was revealed with the change of annealing temperature and doping concentration of aluminum. By analyzing the process of crystal growth inside AZO thin films,the conclusion was drawn in this paper that the difference of crystalline,crystallite orientation and crystallite size of AZO films was mainly caused by preparing conditions and growth habits of AZO crystallite.
出处
《影像科学与光化学》
CAS
CSCD
北大核心
2009年第6期452-461,共10页
Imaging Science and Photochemistry
