Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

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摘要 The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model. The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.

作者蒲颜王亮袁婷婷欧阳思华庞磊刘果果罗卫军刘新宇

机构地区 Key Laboratory of Microelectronics Device & Integrated Technology

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第10期24-27,共4页 半导体学报（英文版）

基金 Project supported by the National Basic Research Program of China(No.2010CB327503) the National Natural Science Foundation of China(No.60890191)

关键词 AlGaN/GaN HEMT multi-bias CV curves non-linear CV model AlGaN/GaN HEMT multi-bias CV curves non-linear CV model

分类号 TN386 [电子电信—物理电子学]

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Journal of Semiconductors

2010年第10期

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Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

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