摘要
使用熔融的KOH在高温下对c面蓝宝石衬底进行不同时间的腐蚀,借助扫描电镜、原子力显微镜对衬底表面进行了表征,然后利用金属有机物化学气相沉积设备在不同腐蚀时间的衬底样品上进行了GaN材料的外延生长。通过X射线衍射结果比较了两组衬底上外延材料的质量,利用原子力显微镜结果对外延层表面形貌进行了分析,最后论述了腐蚀时间的调整对蓝宝石衬底上外延生长氮化镓质量的影响机理。
c-plane sapphire substrate was etched chemically in the molten KOH solvent at a high temperature with different time, the surface microscopy of pre-treated sapphire substrate was obtained by SEM （ Scanning Electronic Microscope） and AFM （Atomicl Force Microscope）, followed with the epitaxial GaN on sapphire substrate etched with different etched time. The quality and the microscopy of the epitaxial GaN were charac- terized using XRD （X-Ray Diffraction） and AFM. Discussion was processed about in which way the etching time affecting the material grown on pre-treated sapphire substrate.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2010年第5期624-627,共4页
Chinese Journal of Luminescence
基金
国家自然科学基金重点(60736033)资助项目
关键词
图形衬底
金属有机物化学气相沉积
氮化镓
patterned sapphire substrates
metal-organic chemical vapor deposition
GaN
