期刊文献+

六棱锥衬底旋转角影响LED效率的模拟探究 被引量:2

Simulation of GaN-based LEDs on Hexagonal Pyramid-shaped Patterned Sapphire Substrate with Different Rotation Angles
原文传递
导出
摘要 以正六棱锥型图形化蓝宝石衬底GaN基LED为研究对象,设计并探讨了正六棱锥图案在排布过程中旋转角的变化对LED出光效率的影响,得出各面光通量随旋转角变化的规律:在0°~30°范围,随着旋转角的增大,总光通量与顶部光通量有下降趋势,底部光通量有增长趋势。当六棱锥旋转角在0°~6°范围内时,LED芯片的总光通量和顶部光通量均有最优值。综合考虑,旋转角为0°~6°的六棱锥型图形衬底对正装LED的出光效率有最佳的优化效果。 Simulated is the light extraction efficiency of GaN-based LEDs fabricated on hexagonal pyramid-shaped patterned sapphire substrate(PSS) with different rotation angles.It is revealed that as the rotation angle of hexagonal pyramids changes,the luminous flux from all six facets of LED chips changes in different trends.When the rotation angle rises from 0° to 30°,the top and total luminous flux decreases,but the bottom luminous flux increases inversely.Further,both the top and total luminous fluxes reach the maximum when the rotation angle is at the range of 0~6°.Combining the optical performance with the processing technique,it is safe to conclude that the hexagonal pyramid-shaped PSS LEDs with rotation angle of 0~6° have the highest light extraction efficiency.
出处 《半导体光电》 CAS CSCD 北大核心 2013年第3期374-378,共5页 Semiconductor Optoelectronics
基金 国家自然科学基金项目(51002052) 广东省重大科技专项项目(2011A080801018) 广东省战略性新兴产业专项资金LED产业项目(2011A081301014,2011A081301012)
关键词 LED 图形化衬底 六棱锥 模拟 旋转角 LED patterned substrate hexagonal pyramid simulation rotation angle
  • 相关文献

参考文献23

  • 1Humphreys C J. Solid-state lighting[J]. MRS Bulletin, 2008, 33.. 459-470.
  • 2Akasaki I, Amano H, Kito M, et al. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED[J]. J. Luminescence, 1991, 48/49(2): 666-670.
  • 3周仕忠,林志霆,王海燕,李国强.图形化蓝宝石衬底GaN基LED的研究进展[J].半导体技术,2012,37(6):417-424. 被引量:9
  • 4李国强,杨慧.Si衬底氮化物LED器件的研究进展[J].半导体光电,2012,33(2):153-160. 被引量:5
  • 5Huh C,Lee K S, Kang E J, et al. Improved light- output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface[J]. J. Appl. Phys., 2003, 93(11):9383- 9385.
  • 6WuLW,Chang S J, Su Y K, et al. In0.2:Ga0.77N/ GaN MQW LEDs with a low temperature GaN cap layer[J]. Solid-State Electronics, 2003, 47(11): 2027-2030.
  • 7Nakada N,Nakaji M, Ishikawa H, et al. Improved characteristics of InGaN multiple-quantum-well light- emitting diode by GaN/A1GaN distributed Bragg reflector grown on sapphire[J]. Appl. Phys. Lett. , 2000, 76(14) :1804-1806.
  • 8李天保,梁建,许并社.光子晶体提高GaN基LED出光效率的研究进展[J].半导体光电,2010,31(3):339-343. 被引量:4
  • 9张贤鹏,韩彦军,罗毅,薛小琳,汪莱,江洋.ICP刻蚀p-GaN表面微结构GaN基蓝光LED[J].半导体光电,2008,29(1):6-9. 被引量:4
  • 10Lee J H,Oh J T, Kim Y C, et al. Stress reduction and enhanced extraction efficiency of GaN-based LED grown on cone-shape-patterned sapphire[J]. IEEE Photonics Technol. Lett. , 2008, 20(18):1563-1565.

二级参考文献101

  • 1HAN Yanjun,XUE Song,WU Tong,WU Zhen,GUO Wenping,LUO Yi,HAO Zhibiao,SUN Changzheng.Nonselective etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas[J].Science China(Technological Sciences),2004,47(2):150-158. 被引量:6
  • 2LAU KeiMay.Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD[J].Science China(Physics,Mechanics & Astronomy),2010,53(9):1578-1581. 被引量:2
  • 3孙永健,陈志忠,齐胜利,于彤军,康香宁,刘鹏,张国义,朱广敏,潘尧波,陈诚,李仕涛,颜建峰,郝茂盛.激光剥离转移衬底的薄膜GaN基LED器件特性分析[J].半导体技术,2008,33(S1):219-223. 被引量:2
  • 4David A, Fujii T, Sharma R, et al. Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution [J]. Appl. Phys. Lett. , 2006, 88: 061124-061126.
  • 5Zehnder U, Weimar A, Strauss U, et al. Industrial production of GaN and InGaN light-emitting diodes on SiC-substrates [J]. J. Crystal Growth, 2001, 230: 497-502.
  • 6Kim BJ,Jung H, Kim S H, et al. GaN-based light- emitting diode with three-dimensional silver reflectors [J]. IEEE Photon. Technol. Lett. , 2009, 21 (11): 700-702.
  • 7Fujii T, Gao Y, Sharrna R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J]. Appl. Phys. Lett., 2004, 84: 855-857.
  • 8Krames M R,Shchekin O B, Mueller-Mach R, et al. Status and future of high-power light-emitting diodes for solid-state lighting [J]. J. Display Technol., 2007, 3:160- 175.
  • 9David A,Fujii T, Matioli E, et al. GaN light-emitting diodes with Archimedean lattice photonie crystals [J]. Appl. Phys. Lett. , 2006, 88: 073510-073512.
  • 10Wiere J J,Krames M R, Epler J E, et al. InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures [J]. Appl. Phys. Lett. ,2004, 84:3885-3887.

共引文献15

同被引文献3

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部