摘要
仅考虑高频分支对极化子的贡献，研究了单模型三元混晶界面极化子的性质．既考虑了电子与体声子的耦合，又考虑了电子与两支界面光声子的耦合．我们计算了ＺｎＳｅｘＴｅ１－ｘ（ＧａＡｓ）和ＧａＡｓｘＳｂ１－ｘ（ＩｎＳｂ）两种材料里电子与声子相互作用．电子在强电场的作用下，界面光声子与电子的耦合加强．体光声子与电子的耦合在ｘ的某一点有一个极小值。
Taking higher frequency branch into account,The interface polaron of one mode behavior ternary mixed crystals was studied.The coupling of electron and LO phonon was considered as well as the coupling of electron and two IO phonon,we calculated the interaction between electron and phonons in ZnSe x Te 1-x (GaAs) and GaAs x Sb 1-x (InSb).If a static electric field perpendicular to the interface is applied to this system,the coupling of electron and IO phonons will be strong.It was found that the energies of electron IO phonons changed little with x.
出处
《内蒙古大学学报（自然科学版）》
CAS
CSCD
1999年第4期458-462,共5页
Journal of Inner Mongolia University：Natural Science Edition
基金
国家自然科学基金
内蒙古自然科学基金
关键词
三元混晶
界面极化子
单模型
半导体
ternary mixed crystal
interface polaron
one mode behaviour
