摘要
探讨了电阻炉提拉法生长白宝石单晶过程中，固体和液体中温度梯度与生长速率和晶体应力的关系．对生长系统和工艺作出相应的调整、改进．
The
relations between the temperature gradient of solid, liquid and the growth velocity, stress in the
crystal are discussed in the Czochralski method of crystal pulling. The growth system is adjusted
and improved. The technology growing sapphire single crystal of Φ >40 mm is obtained from
this experiment.
出处
《四川师范大学学报（自然科学版）》
CAS
CSCD
1999年第4期433-437,共5页
Journal of Sichuan Normal University（Natural Science）
关键词
提拉法
白宝石单晶
单晶
晶体生长
Czochralski method
Sapphire crystal
Temperature gradient
Stress
