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r面白宝石单晶的温梯法生长及缺陷研究 被引量：4

Defect Study of r-plane Sapphire Single Crystal Grown by Temperature Gradient Technique
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摘要 本文描述使用温梯法(TGT)生长(1102)方向的白宝石单晶,应用X射线双晶摇摆曲线(XRC)测定了晶体内部的完整性,再利用KOH熔体腐蚀出样品的r面(1102)上的位错蚀坑,借助扫描电子显微镜(SEM)进行观察,发现r面白宝石的位错腐蚀坑呈等腰三角形,并且有台阶状结构,并分析了位错的成因。 A high quality sapphire single crystal oriented along （1-↑102） was grown by the temperature gradient technique （TGT） and the crystal quality was investigated using X-ray rocking curve （XRC）. The etch pits of dislocations were revealed on the r-plane （1-↑102 ） sapphire by using a melted KOH as etchants. Scanning electron microscope （SEM） demonstrates that the shapes of etch pits located in r- plane of sapphire look like a isosceles triangle with sidestep-like structure. And the mechanism of the formation of dislocations was discussed.
作者 彭观良 周国清 庄漪 邹军 王银珍 李抒智 杨卫桥 周圣明 徐军
机构地区 中国科学院上海光学精密机械研究所
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2005年第4期653-656,共4页 Journal of Synthetic Crystals
关键词 温梯法 r面白宝石 位错 化学腐蚀 腐蚀坑 缺陷 temperature gradient technique （TGT） r-plane sapphire dislocation chemical etching etch pit defect
分类号 O771 [理学—晶体学]
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参考文献9

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二级参考文献14

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共引文献15

同被引文献34

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二级引证文献11

人工晶体学报
2005年 第4期

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