摘要
依据主结电压、空间电荷层宽度与环间距、环宽度和表面电压的关系，提出了用图解法设计场限环结构参数的方法。其中考虑了ＳｉＯ２、柱面结、球面结等击穿电压对参数确定的限制。该方法具有简单明确、综合性、实用性强等特点。
Based on the relationship among the main juntion voltage,width of the depletion layer and the ring distance,ring width,surface voltage,the paper raises an illustration method to design the parameters of the field limiting rings.The limitation on the parameters design brought by the breakdown voltage of SiO 2、the cylindrical junction and the spherical junction are also involved.This method is simple,clear ,synthetic and practicable.
出处
《电力电子技术》
CSCD
北大核心
1999年第3期57-58,53,共3页
Power Electronics
