摘要
基于抗辐照加固0.35μmPDSOI CMOS工艺制作了RF NMOS器件,研究了电离总剂量辐照对不同体接触结构、栅结构器件性能的影响。在其静态工作模式下,分别考虑了辐照对器件转移特性、泄漏电流、跨导及输出特性的影响;在其交流工作模式下,分别考虑了辐照对其交流小信号电流增益、最大有效/稳定增益、截止频率和最高震荡频率的影响。试验结果表明,与同类非加固工艺器件相比,此种PDSOI RF NMOS抗辐照性能更好,其中以LBBC和LTS型体接触器件受电离总剂量辐照影响最小,并且可获得截止频率22.39 GHz和最高振荡频率29.19 GHz。
Based on the platform of irradiation hardened 0.35 μm PDSOI CMOS technology, the PDSOI RF NMOS was implemented. The effects of total ionizing dose radiation on DC and small-signal RF performance of the NMOSFETs with different device structures were characterized and compared using the transfer characteristics, off-state leakage, transconductance and output characteristics to assess DC performance. Moreover, the frequency response of these devices under total ionizing dose radiation was presented, such as small-signal current gain, maximum available/stable gain, cutoff frequency and maximum oscillation frequency. The results indicate that nearly all the RF PDSOI NMOSFETs show unnoticeable degradations in both DC and RF characteristics after radiation as compared with non-hardened devices, in particular for LBBC structure, which is more effective and excellent in the hardness of total ionizing dose radiation. Moreover, the cutoff frequency and the maximal oscillation frequency of O. 35 μm LBBC devices are 22.39 GHz and 29.19 GHz, respectively.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第9期863-867,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(60576051)
国家重点基础研究发展计划资助项目(2006CB3027-01)
