期刊文献+

p-n结光伏探测器的工作体制 被引量:1

The Operating Form of p-n Photovoltaic Detector
在线阅读 下载PDF
导出
摘要 在p-n结光伏探测器的I-V曲线上选取与电压、电流轴的交点作为工作点,分析讨论输出短路或开路时的信号和噪声,继而得到探测率,进行比较得出最佳工作体制。 Selecting typical points on I-V curve of the p-n photovoltaic detector as operate points resulted to different signal, noise and detectivity, therefore the optimum operating form was determined.
机构地区 昆明物理研究所
出处 《红外技术》 CSCD 北大核心 2010年第9期546-548,共3页 Infrared Technology
关键词 P-N结 I-V 工作体制 p-n junction, I-V, operate form
  • 相关文献

参考文献7

  • 1Guggenbuehl Strutt, W, M.J.O. Theory and Experiments on Shot Noise in Semiconductor Junction Diodes and Transistors[C]//Proc. IRE, 1957. 45(6):839-854.
  • 2DeWames R. E,. Williams G. M, Pasko J. G., et al. Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation[J]. Journal of Crystal Growth, 1990, 86(1-4): 849-858.
  • 3Belas E, Hoschl P, Grill R, et al .Deep p-n junction in Hg1-xCdxTe created by ion milling[J]. Semiconductor Science and Technology ,1993, 8(9): 1695.
  • 4Smith E. P. G., Pham L. T.,. Venzor G. M, et al. HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection[J]. Journal of Electronic Materials, 2004, 33(6): 509-516.
  • 5Haoyang Cui, Zhifeng Li, Zhenhua Ye,et al. Methods for determining minority carrier lifetime in HgCdTe photovoltaic deteetors[C]//34th International Conference on Infrared, Millimeter, and Terahertz Waves 2009: 1-2.
  • 6Agnihotri O P, Musca C A and Faraone L. Current status and issues in the surface passivatiou technology of mercury cadmium telluride infrared detectors[J]. Semiconductor Science and Technology, 1998, 13(8): 839.
  • 7Norton P. HgCdTe infrared detectors[J], Opto-Electronics Review, 2002 10(3): 159-174.

同被引文献8

  • 1First Solar Inc.[EB/OL]. http://www.Firstsolar.com / [2013-02-26].
  • 2Jackson P, Hariskos D, Lotter E, et al. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%[J]. Prog. Photovolt: Res. Appl., 2011, 19(7): 894-897.
  • 3Todorov T K, Tang J, Bag S, et al. Beyond 11% Efficiency: Characteri- stics of State-of-the-Art Cu2ZnSn(S,Se)4 Solar Cells[J]. Adv. Energy Mater, 2013, 3(1): 34-38.
  • 4Basol B M. Electrodeposited CdTe and HgCdTe solar cells[J]. Solar Cells, 1988, 23(1-2): 69-88.
  • 5Compaan A D, Gupta A, Lee S, et al. High efficiency, magnetron sputtered CdS/CdTe solar cells[J]. Solar Energy, 2004, 77(6): 815-822.
  • 6Li W Y, Cai X N, Chen Q L, et al. Influence of growth process on the structural, optical and electrical properties of CBD-CdS films[J]. Materials Letters, 2005, 59(1): 1-5.
  • 7Wang S. Fundamentals of Semiconductor Theory and Device Physics[M]. New York: Prentice-Hall, 1989: 222-226.
  • 8孔金丞,张鹏举,杨佩原,李雄军,孔令德,杨丽丽,赵俊,王光华,姬荣斌.非晶态碲镉汞的暗电导率和吸收边(英文)[J].红外技术,2012,34(5):268-271. 被引量:2

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部