摘要
本文介绍了一种新的形貌判定准则———配位多面体生长习性法则。首先在负离子配位多面体生长基元模型的基础上建立了晶体的生长机理模型和界面模型，在此基础上提出了晶体形貌判定法则。即晶体的各晶面的生长速度与其结构中的配位多面体在界面上显露的元素种类有关。显露配位多面体顶点的晶面生长速度快，显露面的晶面生长速度慢，显露棱的晶面生长速度介于两者之间。此外，晶体的各晶面的生长速度还与配位多面体在界面上显露的元素数目有关。显露配位多面体元素数目多的晶面生长速度快。根据此法则成功地解释了γＡｌＯ（ＯＨ）晶体和极性晶体ＺｎＯ，ＳｉＯ２的形貌特征。最后，本文还提出了两种晶体形貌的调制方法，即添加剂调制法和过饱和度调制法。
A kind of new law of morphology
coordination polyhedron law concerning growth habit is introduced.First,the growth
mechanism model and the crystal interface model are built basis on growth unit model of anion
coordination polyhedron.Then,a kind of new law of morphology is proposed.Namely,the growth
rate of various crystal faces is related to the kinds of element of the coordination polyhedron
present at the interface.The direction of crystal face with the corner of the coordination
polyhedron present has the fastest growth rate;the direction of crystal face with the edge of the
coordination polyhedron present has the second fastest growth rate;the direction of crystal face
with the face of the coordination polyhedron present has the slowest growth rate.Moreover,the
growth rate of various crystal faces is related to the number of the element of the coordination
polyhedron present at the interface.The direction of crystal face with the more elements of the
coordination polyhedron present has a faster growth rate.Accordin g to this law,the
morphologies of γ AlO(OH) and polar crystals ZnO,SiO 2 are explained
reasonably.Finally,two kinds of modulation methods of crystal morphology additive
modulation and supersaturating modulation are proposed and the morphology of ZnO crystal
is modulated according to this method.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1999年第2期117-125,共9页
Journal of Synthetic Crystals
基金
国家自然科学基金
关键词
形貌
负离子
配位多面体
晶粒
模型
晶体生长
growth unit,morphology,hydrothermal
method,crystal interface,growth mechanism
