摘要
通过热重量分析法（简称ＴＧＡ法）测定了ＭｏＳｉ２在低温下氧化不同时间后的重量变化，发现５００℃比４００℃或６００℃时的氧化速率明显加快，但未出现“ＰＥＳＴ”现象．认为“ＰＥＳＴ”与氧化层中相的组成有密切关系，氧化时表面生成的致密ＳｉＯ２保护层是阻碍氧化深入进行的重要原因．图３，参４．
The weight change of MoSi2 oxidized different
times at low-temperature was measured by TGA. It showed that the oxidation rate at 500 was
faster than that at 400 or 600 , but the PEST didn't occur. The PEST is closely connected with the
phase in the oxidized film,the important reason is that a fine and close SiO2 film,which formed in
surface when oxidizing,provents further development of oxidiation at low-temperature.3figs.,4refs.
出处
《湘潭矿业学院学报》
1999年第1期69-71,共3页
Journal of Xiangtan Mining Institute
基金
煤炭部青年基金
