摘要
研究了镍对反应烧结碳化硅导电性的影响．结果表明，随含镍量的增加，反应烧结碳化硅的电阻率降低．随测试温度提高，含镍的碳化硅虽呈现负的温度系数，但幅度减小．９００℃保温，随时间延长，电阻率几乎不变．这说明镍可改善反应烧结碳化硅的导电特性．同时还分析了镍的存在方式及其相结构．
The effect of nickel on the conductivity of reaction*4]bonded SiC is studied. The results show that the resistivity of reaction bonded SiC decreases with increase of nickel content The Ni doped SiC has negative temperature coefficient of resistivity. The resistivity of SiC is almost constant with holding time at 900. The results above show that the resistivity of reaction bonded SiC can be improved through adding nickel. The microstructure of the Ni doped SiC is studied in detail.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
1999年第3期176-178,共3页
Rare Metal Materials and Engineering
基金
国家自然科学基金
关键词
反应烧结
碳化硅
导电性
镍
陶瓷
silicon carbide, reaction bonded, conductivity
