摘要
为抑制芯片中微小焊点的电迁移,向共晶SnBi钎料中添加微米级Ni颗粒,并在φ0.5mm铜线接头上形成焊点。结果表明:当电流密度为104A/cm2、通电96h后,阳极附近没有出现富Bi层,即电迁移现象得到抑制。这是由于Ni颗粒与Sn形成了IMC,阻挡了Bi沿Sn基体扩散的快速通道,防止了两相分离,提高了焊点可靠性。
For suppressing electromigration of little soldering points in chips, micr6 sized Ni particle Bi-enrichment was added to eutectic SnBi solder, and forming soldering point at φ0.5 mm Cu filament ends. Results show that there is no Bi enrichment ply in the anode, e.g. electromigration is suppressed when current density is 104 A/cm^2 after 96 h, because of IMC （Ni and Sn） blocks the fast diffusion paths of Bi along Sn-base, separation of two phases is retarded and the reliability of soldering points increases.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2008年第11期60-63,共4页
Electronic Components And Materials
关键词
电子技术
电迁移
无铅复合钎料
SnBi
Ni颗粒
electron technology
electromigration
composite lead-free solders
SnBi
Ni particle
