摘要
采用闭管扩散方式,利用SiO2及Si3N4扩散掩膜在NIN型InP/In0.53Ga0.47As/InP外延材料上制备了两种不同的平面型InGaAs红外探测器,研究了室温下不同扩散区面积的两种器件的正向I-V特性及反向暗电流密度与器件周长面积比的关系,结果表明,扩散区边缘的钝化是平面型InGaAs探测器的制备过程中非常重要的一环,而且Si3N4薄膜的钝化效果优于SiO2薄膜。室温下和-0.1V偏压下,采用Si3N4扩散掩膜的器件的暗电流密度约为20nA/cm2。
The planar-type InGaAs infrared detectors are fabricated on the NIN-type InP/In0.53Ga0.47As/InP wafers by using the sealed-ampoule method with SiO2 and Si3N4 respectively as the diffusion masks.The forward current-voltage characteristics at room temperature for the detectors with different diffusion area and the relationship of the reverse dark current density versus perimeter-to-area ratio characteristics of the two-type InGaAs detectors are analyzed.It is indicated that the passivation for the edge of the diffusion area is one of the key points in planar-type InGaAs detector fabrication,and Si3N4 layer has a better passivation effect than SiO2 layer.At room temperature and -0.1 V reverse bias,the dark current density of the detector using Si3N4 layer as diffusion mask is 20 nA/cm2.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2009年第12期1580-1583,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金重点资助项目(50632060)
中国科学院知识创新工程青年人才领域前沿资助项目(C2-32
C2-50)
