摘要
制备了一系列不同面积的台面型InGaAs红外探测器,通过周长面积比(P/A)的变化分析了器件的暗电流机制及低频噪声性能。结果表明,在现有的材料和工艺水平下,台面边缘和体内的产生复合电流都在总暗电流中占了较大部分。对测试结构器件的低频噪声测量表明,在反偏下,器件表现出明显的1/f噪声;由于边缘产生复合电流对小尺寸器件的影响大,其产生的噪声使得器件总噪声变大。这些结果表明,以后的工艺改进应注重减少边缘电流和体内产生复合电流。
We fabricate a series of mesa type InGaAs infrared detectors with different areas. We use perimeter-to-area analysis to investigate the dark current mechanism and low frequency noise characteristic of these detectors. In these detectors the generation-recombination（gr） currents that are related to mesa edge and the bulk dominate the total dark current. The results of the noise measurement show that, at low frequencies the detectors are 1/f noise dominated. The total noise becomes larger with the increasing edge g-r current of the detector when the device size reduces. The above results indicate that the process improvement should focus on reducing the edge g-r current and bulk g-r current.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2010年第4期500-503,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金重点资助项目(50632060)
中国科学院知识创新工程青年人才领域前沿资助项目(C2-32)
