摘要
采用GaAs标准高电子迁移率晶体管(HEMT)工艺设计了一种低噪声放大器。放大器由4级4指双栅槽结构HEMT器件级联构成。0.25μm栅线条的选用保证器件有低的噪声系数和较高的增益。通过在HEMT的源极串联电感和选择MIM电容微带线实现了放大器输入级、中间级、输出级之间的最佳匹配网络。芯片测试结果表明,所设计低噪声反放大器在34 GHz频率下的小信号增益大于22 dB,噪声系数小于1.8 dB,具有10 dBm的饱和输出功率且线性度较好。该设计方法实现了低噪声、高增益、低功耗放大器的性能要求。
The design of GaAs low noise amplifier was presented based on HEMT process.The amplifier consists of 4-stage cascade HEMT with double recess gate structure.0.25 μm gate was used to get much lower noise figure and higher gain for the amplifier.The optimum impedance matching between input stage,inter stage and output stage of the amplifier can be achieved by source inductance and MIM capacitor in the form of a transmission line.Measurement results show that the gain is greater than 22 dB at 34 GHz.The input and output return losses are greater than 10 dB.The noise figure of less than 2.8 dB is obtained across the 24～34 GHz bandwidth.The stature output power is 10 dBm and the output power at 1 dB compression point for 30 GHz is 4.0 dBm.The performance including low noise,high gain and low power dissipation can be realized in the designed amplifier.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第6期594-597,共4页
Semiconductor Technology
基金
甘肃省科技支撑项目(090GKCA052)
