摘要
用射频磁控溅射法在蓝宝石、硅和石英衬底上沉积出具有好的择优取向的多晶ZnO薄膜 .在 2 70nm波长的光激发下室温下可观察到显著的紫外光发射 (波长为 3 5 6nm)和较弱的蓝光发射 (波长为 44 6nm) .经高温退火后薄膜的结晶质量显著提高 ,在蓝宝石、石英衬底上沉积的薄膜 ,其积分发光强度分别增加了 7倍和 14倍 .而硅衬底上的膜发光强度增强不太显著 .紫外光发射源于电子的带间跃迁 。
Polycrystalline ZnO films with a good preferred orientation were deposited on sapphire, Si and quartz substrates by if magnetron sputtering. A 356 nm Ultraviolet (UV) photoluminescence (PL) peak and a 446 nm blue peak were observed at room temperature when excited with 270 nm light: After high-temperature annealing in oxygen, the crystallinity of the films was improved. The intensity of the UV emission increased by 7 and 14 times, respectively, for the films on sapphire and quartz substrates respectively. We conclude that the UV emission originates from the inter-band transition of electrons and the blue emission is due to the transition of electrons from the shallow donor level of the oxygen vacancies to the valence band.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第6期1484-1487,共4页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :60 0 760 0 6)
教育部博士点基金 (批准号 :2 0 0 0 0 42 2 0 4)资助的课题~~
