摘要
由于在抗辐射加固设计(RHBD)中采用了环形栅的版图结构,由此引发了直栅SPICE仿真验证方法对RHBD不适用的问题.通过分析深亚微米工艺技术下环形栅结构的特性,建立了环形栅的有效栅宽长比算法,同时构建了环形栅的SPICE仿真模型,并针对抗辐射加固设计提出了如何有效地提取版图参数网表的策略,从而解决了传统SPICE仿真验证对RHBD不适用的问题,通过有效的仿真验证,确保电路性能,提高设计的可靠性.
For using enclosed-gate layout MOSFETs in rad-hard by design,because the annular structure is different from ordinary rectangular gate essentially,so the conventional SPICE simulations is not-applicable to radiation-hardening design.In this paper,analyzing the characteristic of enclosed-gate in deep submicron technology,this thesis establishs s an effective aspect ratio arithmetic and buildes SPICE model for enclosed-gate,at the same time,a method about how to extract layout netlist availability is presented here,the three points mentioned above expound the simulation method of radiation-hardening design in deep submicron technology,which resolved the unapplicability between SPICE and RHBD traditionally.Throuth effective simulation,the circuit performance is ensured and reliability in the design is increased.
出处
《微电子学与计算机》
CSCD
北大核心
2010年第6期80-84,共5页
Microelectronics & Computer
