摘要
总剂量辐照下,存储单元和MOS管阈值电压均会发生漂移,引起灵敏放大器性能退化.基于0.6μmSOI工艺,设计了一种用于SONOSEEPROM存储器中的高速、辐照加固的新型灵敏放大器.该电路中采样反相器和参考支路采用电路补偿技术,以达到抗辐照效果.双支路预充技术用于提高读取速度.仿真结果表明灵敏放大器中采样反相器噪声容限,以及参考电流基本不受辐照引起的阈值电压漂移的影响.此外,辐照后新型灵敏放大器电路延迟时间仅为9.16ns,与传统单支路预充结构相比,延迟时间缩短27%.
A high-speed radiation hardened sense amplifier for a SONOS type EEPROM memory is designed and realized in 0.6μm SOI process. Total dose radiation would cause large threshold voltage shifts of both memory cells and MOS transistors, hence degrades the performance of the sense amplifier. Compensation techniques for the sampling inverter and reference branch are proposed to achieve radiation hardness effectively. Furthermore, double branch precharge technique is developed to improve the read speed. As a result, the noise margin of the sampling inverter and the reference circuit in the proposed sense amplifier are not sensitive to threshold voltage shifts induced by the radiation. The simulation result shows that the sensing time of the proposed sense amplifier achieves only 9.16 ns, which is dramatically reduced by 27% compared with the single branch precharge technique.
出处
《微电子学与计算机》
CSCD
北大核心
2010年第5期22-26,30,共6页
Microelectronics & Computer
