摘要
为了改善ZnTiO3介电陶瓷的性能,研究了Nd2O3和Sm2O3掺杂对ZnTiO3陶瓷结构与介电性能的影响,借助TEM型同轴谐振器测量陶瓷的微波介电性能。研究表明,掺杂Sm2O3形成新相Sm2Ti2O7,少量Sm2O3掺杂能有效抑制ZnTiO3分解;掺杂Nd2O3形成新相Nd2Ti2O7和Nd4Ti9O24;Nd2O3和Sm2O3掺杂均能提高谐振器的无载Q值,且Nd2O3的掺杂效果优于Sm2O3:Nd2O3掺杂能使陶瓷的τf从正值向负值变化,通过调整Nd2O3掺杂量(质量分数5%～10%),可获得τf近零、无载Q值大于260的陶瓷组成,可用于制备分米波段的滤波器。
In order to improve the properties of ZnTiO3 dielectric ceramic, the effects of Nd2O3 and Sm2O3 doping on its microstructure and dielectric properties were investigated. Microwave dielectric properties of ZnTiO3 dielectric ceramic were measured using the TEM type coaxial resonator. The results show that, a new crystalline phase SmzTi2O7 is detected in the prepared ceramic doped with Sm2O3 and the decomposition of ZnTiO3 can be inhibitted by a little amount of Sm2O3 doping; new crystalline phases NdzTi2O7 and Nd4Ti9024 are detected in the prepared ceramic doped with Nd2O3; the unloaded Q values of resonators made from doped prepared ceramics are both increased, and the effect of Nd2O3 doping is better than that of Sm2O3 doping; Nd2O3 doping make the τf of of the prepared ceramic change from positive value to negative value; the ceramic with τf near zero and unloaded Q value larger than 260 can be obtained by adjusting Nd2O3 doping amount in 5%-10% （mass fraction）, which can be used to manufacture the filters applied in decimeter wave band.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2010年第5期14-17,共4页
Electronic Components And Materials
基金
江西省教育厅科技项目资助(No赣教技字[2007]220)
