摘要
本文研究了GaSb(111)晶片腐蚀速率随HNO_3/HF变化曲线,并在HNO_3和H_2O_2系液中、温度为3—84℃范围内作了腐蚀速率实验,其1nγ～1/T关系符合Arrhemius公式。计算了腐蚀活化能为ΔE_(HNO3)=ΔE_(E2O2)=3.2kcal/mol,这说明CaSb(111)晶片在这两种腐蚀液中腐蚀机制相同,即在HF(或HCl)过量情况下,腐蚀速率决定步骤为Sb^(-5)被氧化成Sb^(-3)。还测了相对速率差Δγ。
The HNO_3/HF dependence of the etching rate of GaSb (111)wafers was studied. the result indicate that the maximum etching rate γ_(max)corresponds to HNO_3/HF=2/3. This value is just equal to the molecular ratiofor oxido-reduction reaction in the HNO_3 system etchant for GaSb, demonstra-ting that this etching process belongs to the oxido-reduction reaction. The et-ching rate dependence on the temperature in the range(3-84℃) was investiga-ted using two kinds of etchants which are HNO_3 and H_2O_2 systems. Theplots of lnγ-1/T for the two cases agree with the Arrhemius equation, and thecalculated values of activation energies for the two kinds of etchants are thesame, i.e. ΔE_(HNO3)=ΔE_(H2O2)=3.2kcal/mol. This indicates that the mecha-nism of etching is the same or similar for both etchants and the rate-determingstep of the etching process is controlled by the oxidation of Sb^(-5) into Sb^(-3) un-der the excess of HF (or HCl).
出处
《人工晶体学报》
EI
CAS
CSCD
1990年第3期245-248,共4页
Journal of Synthetic Crystals
