摘要
用电化学和光电化学方法研究锑化镓表面的腐蚀以及锑化镓表面氧化膜的生成和溶解．锑化镓电极在一定电势下生成的氧化腹，用俄歇能谱证明，其主要成分为难溶的氧化锑，此氧化膜的存在抑制了锑化镓的进一步腐蚀，同时亦使锑化镓的半导体光电化学性能大为减弱．通过激光微刻蚀及电子显微镜的观察，在刻蚀剂中添加酒石酸、柠檬酸和氢氟酸等试剂，可使刻蚀图形得到改善．实验研究了锑化镓的平带电势的测定．
GaSb is an important compound semiconductor. This paper reports theetching of GaSb, and the formation and dissolution of the oxidized layer of GaSb usingelectrochemical and photoelectrochemical methods. The major composition of the GaSboxidized layer was found to be antimony okides which are difficult to dissolve in aqueoussolution. This layer could prevent the surface from being further etched, and could makethe semiconductor losing its photoelectrochemical properties. Addition of tartaric acid,citric acid and hydrofluoric acid into the solution improved the etching. The method ofmeasuring the flatband potential of the interface between GaSb and electrolyte has alsobeen investigated.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
1996年第3期224-228,共5页
Acta Physico-Chimica Sinica
基金
国家自然科学基金
关键词
半导体电化学
光助微刻蚀
锑化镓
表面氧化膜
Semiconductor electrochemistry, Photoelectrochemistry of semiconductor, Photomicroetching of GaSb, Interface properties of GaSb electrode
