摘要
实验使用脉冲激光熔蚀金属铝靶，使溅射的物质粒子和真空室中的氮气反应以淀积氮化铝（ＡｌＮ）薄膜，淀积时引入氮气直流放电以促使Ａｌ和Ｎ发生完全反应制备高质量符合化学计量比的ＡｌＮ薄膜。讨论了脉冲能量密度、基底温度、气体放电对所沉积薄膜组织结构的影响。实验结果表明，当ＤＥ＝１．０Ｊ·ｃｍ－２，ＰＮ２＝１３．３３３ｋＰａ，Ｔｓｕｂ＝２００℃，Ｖ＝６５０Ｖ，ｆ＝５Ｈｚ，ｄＳ－Ｔ＝４ｃｍ时，高质量的ＡｌＮ薄膜被成功地沉积于Ｓｉ（１００）基片上。分析表明薄膜是具有高取向性的ＡｌＮ（１００）多晶膜，薄膜的能带间隙约为６．２ｅＶ，其电阻率和击穿电场分别为２×１０１３Ω·ｃｍ和３×１０６Ｖ·ｃｍ－１。
AlN (Aluminum Nitride) thin films have been prepared with reaction between Al and nitrogen under the conditions of excimer laser irradiation of an aluminum target and nitrogen discharge the while. The effect of laser energy density, substrate temperature, and gas discharging on the composition and construction of the films was discussed. The stoichiometrical preferred orientation AlN (100) polycrystalline films were deposited on Si (100) wafers with D E =1.0 J·cm -2 , P N 2 =13.333 kPa, T sub =200℃, V =650 V, f =5 Hz, and d S T =4 cm. The testing results show the band gap, the resistivity and the breakdown electric field of the films are 6.2 eV, 2×10 13 Ω·cm and 3×10 6 V·cm -1 respectively.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1999年第1期89-92,共4页
Chinese Journal of Lasers
