摘要
采用正交试验方法研究了射频溅射的工艺因素对Ｓｎ膜形成过程的影响，得到了射频溅射制备Ｓｎ膜新工艺的最佳条件。Ｘ－射线衍射及ＳＥＭ实验结果表明在该工艺条件下得到的Ｓｎ膜为非常细小均匀的β－Ｓｎ的晶体结构。
The effects of the technology factors such as sputtering power,sputtering time and sputtering pressure were investigated by means of orthogonal test method and the best technology on manufacturing the thin film of Sn. The X-ray and SEM experiments indicated that the thin film of Sn is tiny and uniform β-Sn crystal structure by use of this new technology .
出处
《传感器技术》
CSCD
1999年第1期7-9,12,共4页
Journal of Transducer Technology
基金
国家自然科学基金
