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8位600MS/s CMOS超高速并行模数转换器的仿真分析与设计

Simulation analysis & design of an 8-bit 600MS/s ultrafast flash A/D converter
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摘要 描述了一个高速并行(Flash ADC)模数转换器的仿真分析与设计.该模数转换器运用反相器阈值电压量化技术(Threshold Inverter Quantization,TIQ)进行设计,使得使用普通CMOS数字工艺也可获得很高的采样速度.在文中,一个使用TSMC0.25μm工艺的8位TIQ CMOS并行模数转换器被设计出来并加以仿真分析.该模数转换器采样速度可达600MS/s,工作电压为2.5V时功耗约为154.506mW,占用的面积约为0.2mm2.特别适用于高速低电压SoC电路的设计. This paper describes the simulation analysis design of an ultrafast flash A/D converter.This A/D converter is based on the Threshold Inverter Quantization(TIQ)technique which makes A/D converter can achieve high speed by using standard CMOS technology.In this paper,an 8-bit 600-MS/s TIQ bash flash A/D converter was designed with standard TSMC 0.25μm CMOS technology and has been simulated.It dissipates only 154.506mW from a single 2.5V supply and occupies 0.2mm^2 areas.The converter is suitable for high speed and low voltage System-on-Chip(SoC)design.
机构地区 云南大学物理系
出处 《云南大学学报(自然科学版)》 CAS CSCD 北大核心 2010年第3期267-272,279,共7页 Journal of Yunnan University(Natural Sciences Edition)
基金 云南大学理(工)科校级科研项目资助(KL070023) 云南省应用基础研究面上项目资助(2009CD013)
关键词 超高速并行模数转换器 反相器阈值电压量化 强型系统尺寸变化法 ultrafast flash A/D converter Thrashold Inverter Quantization(TIQ) Enhanced Systematic Size Variation technique(ESSV)
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参考文献8

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