摘要
描述了一个高速并行(Flash ADC)模数转换器的仿真分析与设计.该模数转换器运用反相器阈值电压量化技术(Threshold Inverter Quantization,TIQ)进行设计,使得使用普通CMOS数字工艺也可获得很高的采样速度.在文中,一个使用TSMC0.25μm工艺的8位TIQ CMOS并行模数转换器被设计出来并加以仿真分析.该模数转换器采样速度可达600MS/s,工作电压为2.5V时功耗约为154.506mW,占用的面积约为0.2mm2.特别适用于高速低电压SoC电路的设计.
This paper describes the simulation analysis design of an ultrafast flash A/D converter.This A/D converter is based on the Threshold Inverter Quantization(TIQ)technique which makes A/D converter can achieve high speed by using standard CMOS technology.In this paper,an 8-bit 600-MS/s TIQ bash flash A/D converter was designed with standard TSMC 0.25μm CMOS technology and has been simulated.It dissipates only 154.506mW from a single 2.5V supply and occupies 0.2mm^2 areas.The converter is suitable for high speed and low voltage System-on-Chip(SoC)design.
出处
《云南大学学报(自然科学版)》
CAS
CSCD
北大核心
2010年第3期267-272,279,共7页
Journal of Yunnan University(Natural Sciences Edition)
基金
云南大学理(工)科校级科研项目资助(KL070023)
云南省应用基础研究面上项目资助(2009CD013)
关键词
超高速并行模数转换器
反相器阈值电压量化
强型系统尺寸变化法
ultrafast flash A/D converter
Thrashold Inverter Quantization(TIQ)
Enhanced Systematic Size Variation technique(ESSV)