摘要
对六价镀铬的工艺进行研究,在45℃、电流密度为15A·dm-2时电沉积出光亮平整、无缺陷的铬膜。在此基础上在纯铁基体上电沉积制备出一系列不同厚度的铬薄膜,并对其残余应力进行测量和研究。结果表明:Cr膜的平均残余应力和分布残余应力均为拉应力,由于Cr膜在较薄时残余应力的骤降,可判断出其残余应力主要来自于Cr膜的界面应力,与基于Thomas-Fermi-Dirac-Cheng(TFDC)电子理论的判断结果相一致。
The technology of hexavalent Cr electroplating was studided. It is founed that the chromium films electrodeposited at 45 ℃ and the current density of 15 A·dm^-2 are bright and smooth and have no defects. According to the technology, a series of chromium films with different thickness were deposited on the pure ferrous substrates. The residual stresses in the chromium films were measured and analyzed. The results show that both average residual stress and distributional residual stress in the films are tensile stress. Because of the residual stress in the thinner film abruptly dropping, the residual stress comes mainly from the interface stress of the chromium film. This conclusion is consistent with the judgment of the TFDC （Thomas-Fermi-Dirac-Cheng＇s electron theory）.
出处
《热加工工艺》
CSCD
北大核心
2010年第8期130-133,共4页
Hot Working Technology
基金
国家自然科学基金资助项目(50771042)
河南省基础与前沿技术研究计划(092300410064)
河南省高校科技创新人才支持计划项目(2009HASTIT023)
关键词
镀铬
铬膜
残余应力
TFDC电子理论
chromium electroplating
chromium film
residual stress
TFDC electron theory
