摘要
鉴于利用离子注入技术掺杂制作光电集成器件时,离子注入半导体材料的射程分布、射程离散和横向离散对器件性能的影响,应用卢瑟福背散射技术研究将剂量为5×1015cm-2的400 keV能量的Er+离子注入6H-SiC晶体的平均投影射程、射程离散和深度分布。用SRIM2006模拟软件对能量为400 keV的Er+离子注入SiC晶体的深度分布进行了理论模拟,把理论模拟值跟测出的实验值进行比较,发现两者符合较好,从而为今后利用Er+离子注入SiC晶体掺杂制作光电集成器件提供参考依据。
In view of the influence of the projection range,the range straggling,and the lateral deviation of ions in materials on the property of device in the fabrication of photoelectric integration devices by ion implantation,the projection range,the range straggling,and the depth distribution of 400 keV Er＋ ions with dope of 5×1015 cm-2 implanted in 6H-SiC crystal were studied by using Rutherford backscattering technique.The experimental results were compared with theoretical values simulated by SRIM 2006 and a good agreement was observed.This study will offer a reference for the fabrication of photoelectric integration devices by Er＋ ions implanted in SiC crystal.
出处
《济南大学学报（自然科学版）》
CAS
北大核心
2010年第2期202-204,共3页
Journal of University of Jinan(Science and Technology)
基金
山东省中青年科学家科研奖励基金(2006BSB01447)
山东建筑大学科研基金(XN070109)
