摘要
采用"中断法"研究了取向硅钢二次再结晶过程中的异常长大行为,确定了二次再结晶发生的温度范围。通过对各温度下样品的EBSD微观取向分析,确定了缓慢升温时不同阶段晶粒尺寸及取向分布的变化;分析了二次再结晶过程中高斯取向晶粒与晶粒尺寸的关系及取向差分布;讨论了高能晶界理论、高迁移率晶界理论、表面气氛等对高斯晶粒长大的贡献。
The secondary recrystallization and its temperature range of grain oriented silicon steel have been studied by the method of interrupting secondary recrystallization annealing.The evolution of grain sizes and grain orientations during the slow heating process was determined by EBSD technique.The Goss oriented grains,their grain sizes and their misorientations to the surrounding grains were analyzed.The effects of grain boundaries with high energy or high mobility and surface atmosphere on the growth of Goss grains are discussed.
出处
《电子显微学报》
CAS
CSCD
北大核心
2010年第1期48-54,共7页
Journal of Chinese Electron Microscopy Society
基金
国家自然科学基金资助项目(No.50771019)
关键词
取向硅钢
二次再结晶
EBSD
织构
grain oriented steel secondary recrystallization EBSD texture
