摘要
研究了几种消除LEC GaAs材料的位错措施以降低温度梯度从而尽可能降低晶体的热应力。掺入等电子In或Si使杂质硬化,为了抑制晶体表面产生位错,开发了全液封切克劳斯基(FEC)晶体生长技术。结合以上三种技术开发出了Si和In双掺FEC GaAs单晶生长技术以消除位错。采用此技术已生长出半导体低位错密度的GaAs晶体,经证实这种掺Si和In低位错GaAs衬底可以满足GaAs LED制作。
Several measures were developed to eliminate dislocation in LEC （liquid encapsulated Czoehralski） grown GaAs materials, by redncing thetemperature gradient to decrease thermal stresses in the crystal as small as possible. Through doping isoeleetric In and Si for impurity hardening and FEC （full encapsulated Czchralski） pulling technique, the dislocation generation from the crystal surface was effectively suppressed. In order to eliminate dislocations, combing the above three techniques, the growth of In and Si double-doped GaAs crystal was developed. GaAs crystals with low dislocation-density and semi-conducting are grown. The result demonstrates that the Si and In double-doped dislocation-low GaAs is appropriate substrate for GaAs LEDs.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第4期313-316,共4页
Semiconductor Technology
