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Residual impurities and electrical properties of undoped LEC InAs single crystals

Residual impurities and electrical properties of undoped LEC InAs single crystals
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摘要 Impurities and their influence on the properties oflnAs single crystals have been studied by combining the results of glow discharge mass spectrometry （GDMS）, Hall measurements, Raman scattering and infrared absorption. The results indicate that carbon is a major impurity in LEC-InAs single crystals and exhibits a significant influence on the electrical and optical properties. Impurities and their influence on the properties oflnAs single crystals have been studied by combining the results of glow discharge mass spectrometry （GDMS）, Hall measurements, Raman scattering and infrared absorption. The results indicate that carbon is a major impurity in LEC-InAs single crystals and exhibits a significant influence on the electrical and optical properties.
作者 胡炜杰 赵有文 孙文荣 段满龙 董志远 杨俊
机构地区 Institute of Semiconductors
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第4期1-4,共4页 半导体学报（英文版）
关键词 INAS single crystal IMPURITY defect InAs single crystal impurity defect
分类号 O73 [理学—晶体学]
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Journal of Semiconductors
2010年 第4期

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