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LiCaAlF_6单晶的非真空坩埚下降法生长

Growth of LiCaAlF_6 Single Crystal by Vertical Bridgman Method in Nonvacuum Atmosphere
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摘要 以高纯氟化物LiF、CaF2和AlF3为初始试剂,按照精确化学计量比1:1:1摩尔比配料,经高温氟化处理合成严格无水的LiCaAlF6多晶料.将该多晶料密封在铂坩埚中,添加少量聚四氟乙烯粉末,可避免氟化物熔体的氧化与挥发,从而在非真空条件下实现LiCaAlF6单晶的坩埚下降法生长.在单晶生长过程中,炉体温度控制于910~930℃,固液界面温度梯度为30℃.cm-1左右,坩埚下降速率为0.5~1.0mm·h-1,成功生长出无色透明的LiCaAlF6单晶.应用XRD、透射光谱,红外光谱进行了LiCaAlF6单晶基本性质的测试表征.结果表明,该单晶在190~1100nm区域内的光透过率达85%以上. The growth process of single crystal LiCaAlF6 by vertical Bridgman method is reported in this paper.Using LiF,CaF2 and AlF3 as the initial agents,the feed material for the crystal growth is prepared according to the molar ratio of LiF:CaF2:AlF3 =1:1:1.The anhydrous LiCaAlF6 polycrystalline material is synthesized by fluoridation process at elevated temperature.By means of sealing the feed material in a platinum crucible,LiCaAlF6 crystal can be grown using the vertical Bridgman method in a nonvacuum atmosphere as the oxidization and volatilization of the melt can thus be avoided.In the Bridgman growth,the furnace temperature is controlled at 910~930℃ and the temperature gradient across the solid-liquid interface is adjusted to approximate 30℃.cm-1.With the crucible lowering rate in the range of 0.5~1.0 mm.h-1,a transparent LiCaAlF6 crystal has been grown successfully in the vertical Bridgman process.The crystal is characterized with XRD,transmission spectrum,IR spectrum.The transmission spectrum indicates a high optical transmittance of more than 85% in a wide wavelength region from ultraviolet to infrared.
出处 《宁波大学学报(理工版)》 CAS 2010年第2期66-70,共5页 Journal of Ningbo University:Natural Science and Engineering Edition
基金 浙江省自然科学基金(Y4090057) 宁波市自然科学基金(2009610016)
关键词 LiCaAlF6 氟化处理 单晶生长 坩埚下降法 LiCaAlF6 fluoridation process crystal growth vertical Bridgman method
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参考文献5

  • 1王英才,黄朝恩,程立森,方珍意.优质大尺寸Cr:LiCAF晶体的Bridgman法生长[J].人工晶体学报,1995,24(1):10-14. 被引量:6
  • 2Sato H, Bensalah A, Yoshikawa A, et al. Improvement in the quality of LiCaAlF6 single crystal as window material [J]. Opt Mater, 2003, 24(1/2): 123-127.
  • 3Shimamura K, Baldochi S L, Ranieri I M, et al. Crystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphere[J]. Journal of Crystal Growth, 2001, 223(3):383-388.
  • 4Shimamura K, Sato H, Bensalah A, et al. Growth of Ce-doped Colquiriite- and Scheelite-type single crystals for UV laser applications[J]. Opt Mater, 2002, 19(1): 109- 116.
  • 5Chen Hongbing, Fan Shiji, Xia Haiping, et al. Phase equilibria of pseudo-binary systems LiF-CaAlF5 and LiFSrAlF5[J]. J Crystal Growth, 2001, 235(1/4):596-602.

二级参考文献2

  • 1程立森,人工晶体学报,1994年,23卷,243页
  • 2程立森,1993年

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