摘要
随着CMOS器件特征尺寸的不断缩小,绝缘栅介质层也按照等比例缩小的原则变得越来越薄,由此而产生的栅漏电流增大和可靠性降低等问题变得越来越严重。传统的SiO2栅介质材料已不能满足CMOS器件进一步缩小的需要,而利用高介电常数栅介质(高k)取代SiO2已成为必然趋势。而在前栅工艺下,SiO2界面层生长问题严重制约了EOT的缩小以及器件性能的提升。介绍了一种前栅工艺下的高k/金属栅结构CMOS器件EOT控制技术,并成功验证了Al元素对SiO2界面层的氧吸除作用。
With CMOS device characteristic dimension scaling, the gate dielectric becomes thinner and thinner according to the principle of scaling. Consequently, the gate leakage current increases significantly and the device becomes less reliable. So the traditional SiO2 dielectric can not satisfy the next generation process node. The high k dielectric will definitely replace SiO2 as the gate dielectric. However, under the gate-first process, the iuss that the interfacial layer SiO2 grow suppress the reducing of EOT and optimizing of device performance. In this paper, a gate-first HK/MG CMOS device EOT control technology was introduced, and the Al＇ s scavenging effect was found.
出处
《电子工业专用设备》
2010年第4期7-12,20,共7页
Equipment for Electronic Products Manufacturing
