摘要
为研究钆在ＭｇＯ薄膜表面吸附的特性。首先在经硫代乙酰胺（ＣＨ＿３ＣＳＮＨ２）处理的ＧａＡｓ（１００）表面外廷生长ｐ型半导体ＭｇＯ（１１０）薄膜，然后利用同步辐射光电子能谱研究钆在此表面的吸附。结果发现由于Ｇｄ／ＭｇＯ界面的能带弯曲使Ｍｇ２ｐ向高结合能端位移０．４ｅＶ，而且从实验结果推断，钆与衬底反应很弱，并且主要以团簇的形式吸附。
We have determined the MgO thin film grown on the CH3CSNH2--treated GaAs (100)surface as a p-type semiconductor in terms of the Law of mass action. During the adsorption of Gd on surface, the Mg2p band shifted towards lower kinetic energy of 0.4eV upon the effect of band bending. Moreover, there was a weak reaction between Gd and MgO, and Gd adsorbed on the MgO surface mainly in form of clusters.
基金
国家自然科学基金
