摘要
本文扼要介绍了电子显微镜的现状与展望。透射电子显微镜方面主要有：高分辨电子显微学及原子像的观察，像差校正电子显微镜，原子尺度电子全息学，表面的高分辨电子显微正面成像，超高压电子显微镜，中等电压电镜，１２０ｋＶ，１００ｋＶ分析电镜，场发射枪扫描透射电镜及能量选择电镜等，透射电镜将又一次面临新的重大突破；扫描电子显微镜方面主要有：分析扫描电镜和Ｘ射线能谱仪、Ｘ射线波谱仪和电子探针仪、场发射枪扫描电镜和低压扫描电镜、超大试样室扫描电镜、环境扫描电镜、扫描电声显微镜、测长／缺陷检测扫描电镜、晶体学取向成像扫描电子显微术和计算机控制扫描电镜等。扫描电镜的分辨本领可望达到０．２—０．３ｎｍ并观察到原子像。
The state and prospects of electron microscopes were described shortly in this paper.For transmission electron microscope(TEM),there are:high resolution electron microscope(HREM) and imaging of atomic structure,aberration corrected transmission electron microscope,electron holography at atomic dimensions,HREM plan view imaging of surface structure,ultrahigh voltage transmission electron microscope,mid voltage transmission electron microscope,120kV and 100kV analytical electron microscope,field emission scanning transmission electron microscpe(FE STEM),energy filtering transmission electron microscope(EF TEM),there will be a new break through for TEM in the near future;for scanning electron microscope(SEM):analytical scanning electron microscope and energy dispersive X Ray spectrometer(EDS),wavelength dispersive X Ray spectrometer(WDS) and electron probe microanalyzer(EPMA),field emission scanning electron microscope(FE SEM) and low voltage scanning electron microscope,ultra large specimen chamber scanning electron microscope,environmental scanning electron microscope(ESEM),scanning electron acoustic microscope(SEAM),defect review(critical dimension measurement)scanning electron microscope(CD SEM),orientation imaging microscopy,computer controlled scanning electron microscope(PC SEM),and it would seem that the inherent limit of secondary electron resolution could be at about 0.2 to 0.3nm and be good enough to permit atomic imaging.
出处
《电子显微学报》
CAS
CSCD
1998年第6期767-776,共10页
Journal of Chinese Electron Microscopy Society
基金
国家教委高校博士学科点专项科研基金
关键词
透射电子显微镜
扫功电子显微镜
仪器制造
transmission electron microscope\ scanning electron microscope\ instrumentation state and prospects
