摘要
Cu thin films are deposited on p-type Si （100） substrates by magnetron sputtering at room temperature. The interface reaction and atomic diffusion of Cu/SiO2/Si （100） systems are studied by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results can be obtained. The onset temperature of interdiffusion for Cu/SiO2/Si（100） is 350~℃. With the annealing temperature increasing, the interdiffusion becomes more apparent. The calculated diffusion activation energy is about 0.91 eV. For the Cu/SiO2/Si （100） systems copper silicides are not formed below an annealing temperature of 350~℃. The formation of the copper silicides phase is observed when the annealing temperature arrives at 450~℃.
Cu thin films are deposited on p-type Si （100） substrates by magnetron sputtering at room temperature. The interface reaction and atomic diffusion of Cu/SiO2/Si （100） systems are studied by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results can be obtained. The onset temperature of interdiffusion for Cu/SiO2/Si（100） is 350~℃. With the annealing temperature increasing, the interdiffusion becomes more apparent. The calculated diffusion activation energy is about 0.91 eV. For the Cu/SiO2/Si （100） systems copper silicides are not formed below an annealing temperature of 350~℃. The formation of the copper silicides phase is observed when the annealing temperature arrives at 450~℃.
基金
supported by the National Natural Science Foundation of China (Grant No. 10375028)
