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YG8衬底腐蚀处理对氮化碳薄膜摩擦学性能的影响 被引量:3

EFFECT OF CORROSION OF YG8 SUBSTRATE ON TRIBOLOGICAL PROPERTIES OF CARBON NITRIDE FILMS
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摘要 采用直流与射频磁控反应溅射法在硬质合金YG8衬底上制备了氮化碳(carbon nitride,CNx)薄膜。研究了溅射方式、衬底腐蚀处理对薄膜摩擦学性能的影响。结果表明:射频反应磁控溅射制备的CNx薄膜的膜基结合力和摩擦因数明显高于直流反应磁控溅射薄膜的,适当的负偏压可以提高膜基结合力。衬底化学腐蚀预处理能够大幅度提高CNx薄膜的膜基结合力,对直流溅射CNx薄膜的摩擦因数影响不大,但能降低射频溅射CNx薄膜的摩擦因数。射频反应磁控溅射法制备的CNx薄膜比直流溅射法制备的CNx薄膜耐磨性能好。衬底化学腐蚀预处理和溅射时对衬底施加适当的负偏压均有利于耐磨性能的提高。 The carbon nitride (CNx) films were deposited on a YG8 carbide alloy substrates by direct current (DC) or radio frequency (RF) magnetron.The effects of depositing method and corrosion of YG8 substrates on the tribological properties of the CNx films were investigated.The results reveal that the adhesion and friction coefficients of the CNx films prepared by RF magnetron sputtering are higher than that prepared by DC magnetron sputtering.The results show that the substrate bias could improve the adhesion of the films.The corrosion of the YG8 substrates had an effect on the adhesion,which could reduce the friction coefficients of the RF sputtering films but had a slight effect on those of the DC sputtering films.The wear resistance of the CNx films deposited by RF magnetron sputtering was higher than that by DC magnetron sputtering.The corrosion of the YG8 substrates and the substrate bias both favored the improvement of the wear resistance of the CNx films.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2010年第1期126-130,共5页 Journal of The Chinese Ceramic Society
关键词 氮化碳薄膜 磁控溅射 摩擦学 腐蚀 carbon nitride film magnetron sputtering tribology corrosion
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参考文献7

  • 1LIU A Y, COHEN M L. Prediction of new low compressibility solids [J]. Science, 1989, 245: 841-842.
  • 2TETER D M, HEMLEY R J. Low compressibility carbon nitrides [J]. Science, 1996, 271:53-55.
  • 3LI Junjie, ZHENG W T, JIN Zengsun, et al. Influence of substratc DC bias on chemical bonding, adhesion and roughness of carbon nitride films [J]. Appl Surf Sci, 2002, 191: 273-279.
  • 4CZYZNIEWSKI A, PRECHT W, PANCIELEJKO M, et al. Structure, composition and tribological properties of carbon nitride films [J]. Thin Solid Films, 1998, 317: 384-387.
  • 5吴大维,何孟兵,郭怀喜,罗海林,张志宏,傅德君,范湘军.C_3N_4薄膜的结构与性能研究[J].物理学报,1997,46(3):530-535. 被引量:17
  • 6NESLADEK M, VANDIERERDONCK K, QUAEYHAGENS C, et al. Adhesion of diamond coatings on cemented carbide [J]. Thin Solid Films, 1995, 270: 184-188.
  • 7宋建华,苗晋琦,张恒大,陈利民,刘志龄,唐伟忠,吕反修,张玉英.硬质合金金刚石涂层工具基体前处理有效方法探讨[J].金刚石与磨料磨具工程,2002,22(5):8-11. 被引量:6

二级参考文献6

  • 1Zhang Y F,Appl Phys Lett,1996年,68卷,1页
  • 2Liu A M,Phys Rev B,1994年,50卷,10362页
  • 3Chen M Y,J Vac Sci Technol A,1993年,11卷,521页
  • 4Niu C,Science,1993年,261卷,334页
  • 5Liu A Y,Phys Rev B,1990年,41卷,10727页
  • 6Liu A Y,Science,1989年,245卷,841页

共引文献21

同被引文献32

  • 1沟引宁,孙鸿,黄楠,张文英,冷永祥.磁过滤真空弧源沉积技术制备C/C多层类金刚石膜及其摩擦磨损性能研究[J].摩擦学学报,2006,26(2):121-124. 被引量:20
  • 2杨文彬,张立同,成来飞,徐永东,刘永胜.低压化学气相沉积制备掺硼碳薄膜及其表征[J].硅酸盐学报,2007,35(5):541-545. 被引量:9
  • 3唐利强,刘军,陈志刚,陈春,吴燕杰.基片偏压对直流反应磁控溅射CNx薄膜性能的影响[J].材料保护,2007,40(8):48-50. 被引量:1
  • 4LIU A Y, COHEN M L. Prediction of new low compressibility solids [J]. Science, 1989, 245(4920): 841-842.
  • 5LEE H Y, LEE D K, KANG D H, et al. The effect of r.f. substrate bias on the properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition [J]. Surf Coat Tech, 2005, 193(1-3): 152-156.
  • 6ROH Kimin, YOU Shinjae, CHOI Sikyoung, et al. Influence of N2 gas pressure on the chemical bonds of amorphous carbon nitride films [J]. Plasma Processes Polym, 2009, 9(7): 647-651.
  • 7LOGOTHETIDIS S, CHARITIDIS C. Elastic properties of hydro- gen-flee amorphous carbon thin films and their relation with car- bon-carbon bonding [J]. Thin Solid Films, 1999, 353(1/2): 208-213.
  • 8LING H, WU J D, SUN J, et al. Influences of substrate bias on the composition and structure of carbon nitride thin films prepared by ECR-plasma assisted pulsed laser deposition [J]. Diamond Relat Mater, 2002, 11(8): 1584-1591.
  • 9RIASCOS H, ZAMBRANO G, PRIETO P, et al. Characterization of fullerene-like CNx thin films deposited by pulsed-laser ablation of graphite in nitrogen [J]. Phys Status Solidi A, 2004, 188:617422.
  • 10FENG P X, YANG P, SHI Y C. Effect of bias voltages on the synthesis of nanostructured carbon nitride films [J]. J Cryst Growth, 2006, 291(1): 22-26.

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